Advanced electrical-level modeling of EEPROM cells

Massimo Lanzoni; Piero Olive; Bruno Riccò; Jordi Suñé

doi:10.1109/16.210204

Advanced electrical-level modeling of EEPROM cells

Massimo Lanzoni, Piero Olive, Bruno Riccò, Jordi Suñé

Departament de Física

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

27 Cites (Scopus)

Resum

Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE

Idioma original	Anglès
Pàgines (de-a)	951-957
Revista	IEEE Transactions on Electron Devices
Volum	40
DOIs	https://doi.org/10.1109/16.210204
Estat de la publicació	Publicada - 1 de gen. 1993

Accés al document

10.1109/16.210204

Altres arxius i enllaços

https://www.scopus.com/pages/publications/0027591870

Com citar-ho

@article{dc1af8850ffe4d4697a3ca73c189a934,

title = "Advanced electrical-level modeling of EEPROM cells",

abstract = "Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. {\textcopyright} 1993 IEEE",

author = "Massimo Lanzoni and Piero Olive and Bruno Ricc{\`o} and Jordi Su{\~n}{\'e}",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/16.210204",

language = "English",

volume = "40",

pages = "951--957",

}

TY - JOUR

T1 - Advanced electrical-level modeling of EEPROM cells

AU - Lanzoni, Massimo

AU - Olive, Piero

AU - Riccò, Bruno

AU - Suñé, Jordi

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE

AB - Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE

UR - https://www.scopus.com/pages/publications/0027591870

U2 - 10.1109/16.210204

DO - 10.1109/16.210204

M3 - Article

SN - 0018-9383

VL - 40

SP - 951

EP - 957

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Advanced electrical-level modeling of EEPROM cells

Resum

Accés al document

Altres arxius i enllaços

Fingerprint

Com citar-ho