Accurate deterministic numerical simulation of p-n junctions

P. González; A. Godoy; F. Gámiz; J. A. Carrillo

doi:10.1007/s10825-004-7052-y

Accurate deterministic numerical simulation of p-n junctions

P. González, A. Godoy, F. Gámiz, J. A. Carrillo

Departament de Matemàtiques

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

4 Cites (Scopus)

Resum

In this work some variants of a deterministic simulation of p-n junctions are considered. From a mathematical point of view, this will be done by means of the numerical resolution of the corresponding Boltzmann transport's equations (BTE's): one for the electrons and another one for the holes, coupled by the Poisson equation for the potential, from which the electric field is calculated. In order to improve the efficiency of the Finite-Difference Weighted Essentially Non-Oscillatory (FD-WENO) code, we will consider the two transport equations in the depletion zone and only the corresponding BTE equation for the majority carrier in each one of the neutral zones, instead of solving the two BTE's in the entire length of the device. © Springer Science + Business Media, Inc. 2004.

Idioma original	Anglès
Pàgines (de-a)	235-238
Revista	Journal of Computational Electronics
Volum	3
Número	3-4
DOIs	https://doi.org/10.1007/s10825-004-7052-y
Estat de la publicació	Publicada - 1 d’oct. 2004

Accés al document

10.1007/s10825-004-7052-y

Com citar-ho

@article{ffbe123fb7ea48f4a4ea24e8de781558,

title = "Accurate deterministic numerical simulation of p-n junctions",

abstract = "In this work some variants of a deterministic simulation of p-n junctions are considered. From a mathematical point of view, this will be done by means of the numerical resolution of the corresponding Boltzmann transport's equations (BTE's): one for the electrons and another one for the holes, coupled by the Poisson equation for the potential, from which the electric field is calculated. In order to improve the efficiency of the Finite-Difference Weighted Essentially Non-Oscillatory (FD-WENO) code, we will consider the two transport equations in the depletion zone and only the corresponding BTE equation for the majority carrier in each one of the neutral zones, instead of solving the two BTE's in the entire length of the device. {\textcopyright} Springer Science + Business Media, Inc. 2004.",

keywords = "Bipolar devices, Boltzmann-Poisson system, FD-WENO methods, P-n junctions",

author = "P. Gonz{\'a}lez and A. Godoy and F. G{\'a}miz and Carrillo, {J. A.}",

year = "2004",

month = oct,

day = "1",

doi = "10.1007/s10825-004-7052-y",

language = "English",

volume = "3",

pages = "235--238",

journal = "Journal of Computational Electronics",

issn = "1569-8025",

number = "3-4",

}

TY - JOUR

T1 - Accurate deterministic numerical simulation of p-n junctions

AU - González, P.

AU - Godoy, A.

AU - Gámiz, F.

AU - Carrillo, J. A.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - In this work some variants of a deterministic simulation of p-n junctions are considered. From a mathematical point of view, this will be done by means of the numerical resolution of the corresponding Boltzmann transport's equations (BTE's): one for the electrons and another one for the holes, coupled by the Poisson equation for the potential, from which the electric field is calculated. In order to improve the efficiency of the Finite-Difference Weighted Essentially Non-Oscillatory (FD-WENO) code, we will consider the two transport equations in the depletion zone and only the corresponding BTE equation for the majority carrier in each one of the neutral zones, instead of solving the two BTE's in the entire length of the device. © Springer Science + Business Media, Inc. 2004.

AB - In this work some variants of a deterministic simulation of p-n junctions are considered. From a mathematical point of view, this will be done by means of the numerical resolution of the corresponding Boltzmann transport's equations (BTE's): one for the electrons and another one for the holes, coupled by the Poisson equation for the potential, from which the electric field is calculated. In order to improve the efficiency of the Finite-Difference Weighted Essentially Non-Oscillatory (FD-WENO) code, we will consider the two transport equations in the depletion zone and only the corresponding BTE equation for the majority carrier in each one of the neutral zones, instead of solving the two BTE's in the entire length of the device. © Springer Science + Business Media, Inc. 2004.

KW - Bipolar devices

KW - Boltzmann-Poisson system

KW - FD-WENO methods

KW - P-n junctions

U2 - 10.1007/s10825-004-7052-y

DO - 10.1007/s10825-004-7052-y

M3 - Article

SN - 1569-8025

VL - 3

SP - 235

EP - 238

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

IS - 3-4

ER -

Accurate deterministic numerical simulation of p-n junctions

Resum

Accés al document

Fingerprint

Com citar-ho