Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model

F. Palumbo, E. Miranda, S. Lombardo

Producció científica: Contribució a revista › Article › Recerca

3 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	166-169
Revista	Microelectronic Engineering
Volum	80
DOIs	https://doi.org/10.1016/j.mee.2005.04.062
Estat de la publicació	Publicada - 1 de gen. 2005

Accés al document

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AU - Miranda, E.

AU - Lombardo, S.

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