Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides".: Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.

E. Miranda; J. Suñé; R. Rodríguez; M. Nafría; X. Aymerich; IEEE Electron Devices Society

Abstracts of the 29^th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides". Abstracts of the 29^th IEEE Semniconductor Interfase Specialists Conference.

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich, IEEE Electron Devices Society (Editor)

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

Idioma original	No s'ha definit/desconegut
Lloc de publicació	San Diego (US)
Nombre de pàgines	0
Estat de la publicació	Publicada - de juny 1998

Com citar-ho

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title = "Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. {"}Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides{"}.: Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich",

editor = "Society, {IEEE Electron Devices}",

year = "1998",

month = jun,

language = "Indefinido/desconocido",

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T2 - Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.

AU - Miranda, E.

AU - Suñé, J.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

A2 - Society, IEEE Electron Devices

PY - 1998/6

Y1 - 1998/6

M3 - Libro de Actas

BT - Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides".

CY - San Diego (US)

ER -

Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides". Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.

Com citar-ho

Abstracts of the 29^th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides". Abstracts of the 29^th IEEE Semniconductor Interfase Specialists Conference.