Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

S. Dueñas; E. Castan; L. Quintanilla; L. Enríquez; J. Barbolla; E. Lora-Tamayo; J. Montserrat

Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

S. Dueñas, E. Castan, L. Quintanilla, L. Enríquez, J. Barbolla, E. Lora-Tamayo, J. Montserrat

Departament de Física

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	1074-1078
Revista	Materials Science and Technology
Número	11
Estat de la publicació	Publicada - 1 de gen. 1995

Com citar-ho

@article{dd65b0f2a7cd46898a9d0598fa8856d4,

title = "Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors",

author = "S. Due{\~n}as and E. Castan and L. Quintanilla and L. Enr{\'i}quez and J. Barbolla and E. Lora-Tamayo and J. Montserrat",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "1074--1078",

number = "11",

}

TY - JOUR

T1 - Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

AU - Dueñas, S.

AU - Castan, E.

AU - Quintanilla, L.

AU - Enríquez, L.

AU - Barbolla, J.

AU - Lora-Tamayo, E.

AU - Montserrat, J.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

SN - 0267-0836

SP - 1074

EP - 1078

JO - Materials Science and Technology

JF - Materials Science and Technology

IS - 11

ER -