A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation

P. Saraza-Canflanca, J. Martin-Martinez, E. Roca, R. Castro-Lopez, R. Rodriguez, M. Nafria, F. V. Fernandez

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Resum

This paper addresses the automated parameter extraction of Random Telegraph Noise (RTN) models in nanoscale field-effect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/de-Trapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows getting distribution functions of the amplitude of the current shifts and of the number of active defects vs.Time.

Idioma originalAnglès
EditorInstitute of Electrical and Electronics Engineers Inc.
Nombre de pàgines4
ISBN (electrònic)9781665467032
DOIs
Estat de la publicacióPublicada - 2022

Sèrie de publicacions

NomProceedings - 2022 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2022

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