A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method

M. Zhang, G. Wang, S. Long, Z. Yu, Y. Li, D. Xu, H. Lv, Q. Liu, E. Miranda, J. Suñé, M. Liu

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Resum

The correlation between the set time ( $t_{\mathrm {\mathrm {set}}}$ ) and the initial off-state resistance ( $R_{\mathrm{\scriptscriptstyle OFF}}$ ) statistics for a Ti/ZrO 2 /Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure $t_{\mathrm {\mathrm {set}}}$ , and the gathered statistical data were analyzed using Weibull distributions. Both the Weibull slope ( $\beta _{t}$ ) and the scale factor ( $t_{\mathrm {\mathrm {set63\%}}}$ ) of $t_{\mathrm {\mathrm {set}}}$ distributions were found to increase logarithmically with $R_{\mathrm{\scriptscriptstyle OFF}}$ . The observed $t_{\mathrm {\mathrm {set}}}-R_{\mathrm{\scriptscriptstyle OFF}}$ interdependence provides a guideline in improving the switching uniformity and optimizing the tradeoff between set speed and disturb immunity. An analytical cell-based model was developed to explain the $R_{\mathrm{\scriptscriptstyle OFF}}$ -dependent $t_{\mathrm{\scriptscriptstyle SET}}$ statistics, which can be implemented in statistical compact models and circuit simulators for improving RRAM cell design and memory performances.
Idioma originalEnglish
Pàgines (de-a)1303 - 1306
Nombre de pàgines4
RevistaIEEE Electron Device Letters
Volum36
Número12
DOIs
Estat de la publicacióPublicada - 2015

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