A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method

Meiyun Zhang, Guoming Wang, Shibing Long, Zhaoan Yu, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Enrique Miranda, Jordi Suñé, Ming Liu

Sortida de recercaRecercarevisió per companys

13 Cites (Scopus)

Resum

© 2015 IEEE. The correlation between the set time (tset) and the initial off-state resistance (ROFF) statistics for a Ti/ZrO2/Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure tset, and the gathered statistical data were analyzed using Weibull distributions. Both the Weibull slope (βt) and the scale factor (tset63%) of tset distributions were found to increase logarithmically with ROFF. The observed tset - ROFF interdependence provides a guideline in improving the switching uniformity and optimizing the tradeoff between set speed and disturb immunity. An analytical cell-based model was developed to explain the ROFF-dependent tSET statistics, which can be implemented in statistical compact models and circuit simulators for improving RRAM cell design and memory performances.
Idioma originalEnglish
Número d’article7307111
Pàgines (de-a)1303-1306
RevistaIEEE Electron Device Letters
Volum36
Número d'incidència12
DOIs
Estat de la publicacióPublicada - 1 de des. 2015

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