A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

Javier Diaz-Fortuny, Javier Martin-Martinez, Rosana Rodriguez, Montserrat Nafria, Rafael Castro-Lopez, Elisenda Roca, Francisco V. Fernandez

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5 Cites (Scopus)

Resum

This work presents a new method to statistically characterize the emission times and threshold voltage shifts (ΔVth) related to oxide defects in nanometer CMOS transistors during aging tests. The method identifies the Vth drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.

Idioma originalEnglish
EditorInstitute of Electrical and Electronics Engineers Inc.
Nombre de pàgines4
ISBN (electrònic)9781538648117
DOIs
Estat de la publicacióPublicada - 3 de maig 2018

Sèrie de publicacions

Nom2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Volum2018-January

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