@book{d494591f712c4119849aab2a0587f9e8,
title = "A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices",
abstract = "In this work a new method to characterize Random Telegraph Noise (RTN) in a large number of devices is presented. The method is applied to the RTN characterization of nearly 800 pMOS transistors and compared with conventional approaches. The results presented here show that the new method, which requires the measurement of each device only in two instants, can hugely reduce the measurement time needed for the statistical characterization of RTN.",
author = "G. Pedreira and J. Martin-Martinez and J. Diaz-Fortuny and P. Saraza-Canflanca and R. Rodriguez and R. Castro-Lopez and E. Roca and Fernandez, {F. V.} and M. Nafria",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",
year = "2019",
month = may,
day = "22",
doi = "10.1109/IRPS.2019.8720582",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}