A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation

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1 Citació (Scopus)

Idioma original	Anglès
Pàgines (de-a)	598-599
Revista	IEEE International Reliability Physics Symposium proceedings
DOIs	https://doi.org/10.1109/RELPHY.2005.1493161
Estat de la publicació	Publicada - 1 de gen. 2005

Accés al document

@article{c3b681bbb1824d7fa57260db19c7b55c,

title = "A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation",

author = "E. Miranda and \{Miranda Castellano\}, \{Enrique Alberto\}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/RELPHY.2005.1493161",

language = "English",

pages = "598--599",

}

TY - JOUR

T1 - A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation

AU - Miranda, E.

AU - Miranda Castellano, Enrique Alberto

PY - 2005/1/1

Y1 - 2005/1/1

UR - https://www.scopus.com/pages/publications/28744451518

U2 - 10.1109/RELPHY.2005.1493161

DO - 10.1109/RELPHY.2005.1493161

M3 - Article

SN - 1541-7026

SP - 598

EP - 599

JO - IEEE International Reliability Physics Symposium proceedings

JF - IEEE International Reliability Physics Symposium proceedings

ER -