@book{07cee6f897ad44969f12f100086327e4,
title = "A Model Parameter Extraction Methodology Including Time-Dependent Variability for Circuit Reliability Simulation",
abstract = "In current CMOS advanced technology nodes, accurate extraction of transistor parameters affected by time-dependent variability, like threshold voltage (Vth) and mobility (μ), has become a critical issue for both analog and digital circuit simulation. In this work, a precise VTH0 and U0 BSIM parameters extraction methodology is presented, together with a straightforward IDS to VTH0 shift conversion, to allow the complete study of device aging effects for reliability circuit simulation.",
keywords = "aging, BTI, CMOS, HCI, modelling, RTN",
author = "J. Diaz-Fortuny and P. Saraza-Canflanca and A. Toro-Frias and R. Castro-Lopez and J. Martin-Martinez and E. Roca and R. Rodriguez and Fernandez, \{F. V.\} and M. Nafria",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",
year = "2018",
month = aug,
day = "13",
doi = "10.1109/SMACD.2018.8434867",
language = "English",
isbn = "9781538651520",
series = "SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}