TY - JOUR
T1 - A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
AU - Pedro, M.
AU - Martin-Martinez, J.
AU - Rodriguez, R.
AU - Gonzalez, M. B.
AU - Campabadal, F.
AU - Nafria, M.
PY - 2019/9/1
Y1 - 2019/9/1
N2 - In this work, an automatic and flexible measurement setup, which allows a massive electrical characterization of single RRAM devices with pulsed voltages, is presented. The evaluation of the G-V maps under single-pulse test-schemes is introduced as an example of application of the proposed methodology, in particular for neuromorphic engineering, where the fine analog control of the synaptic device conductivity state is required, by inducing small changes in each learning iteration. To describe the obtained data, a time-independent compact model for memristive devices is used. The fitting parameters statistical distributions are further studied.
AB - In this work, an automatic and flexible measurement setup, which allows a massive electrical characterization of single RRAM devices with pulsed voltages, is presented. The evaluation of the G-V maps under single-pulse test-schemes is introduced as an example of application of the proposed methodology, in particular for neuromorphic engineering, where the fine analog control of the synaptic device conductivity state is required, by inducing small changes in each learning iteration. To describe the obtained data, a time-independent compact model for memristive devices is used. The fitting parameters statistical distributions are further studied.
KW - Automatic measurement setup
KW - Conductivity control
KW - Massive characterization
KW - Modelling
KW - Neuromorphic engineering
KW - RRAM
KW - Synaptic devices
UR - http://www.mendeley.com/research/flexible-characterization-methodology-rram-application-modeling-conductivity-changes-synaptic-weight
M3 - Article
SN - 0038-1101
VL - 159
SP - 57
EP - 62
JO - SOLID-STATE ELECTRONICS
JF - SOLID-STATE ELECTRONICS
ER -