A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu, Albin Bayerl, Marc Porti, Javier Martin-Martinez, Mario Lanza, Rosana Rodriguez, Vikas Velayudhan, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez, Eddy Simoen

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This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
Idioma originalEnglish
Número d’article6880443
Pàgines (de-a)3118-3124
RevistaIEEE Transactions on Electron Devices
Volum61
Número9
DOIs
Estat de la publicacióPublicada - 1 de gen. 2014

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