A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

Denis Flandre; Francesca Campabadal; Joan Esteve; E. Lora-Tamayo; Febe Van de Wiele

A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

Denis Flandre, Francesca Campabadal, Joan Esteve, E. Lora-Tamayo, Febe Van de Wiele

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	5111-5113
Revista	Journal of Applied Physics
Volum	70
Número	9
Estat de la publicació	Publicada - 1 de nov. 1991

Com citar-ho

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title = "A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates",

author = "Denis Flandre and Francesca Campabadal and Joan Esteve and E. Lora-Tamayo and {Van de Wiele}, Febe",

year = "1991",

month = nov,

day = "1",

language = "English",

volume = "70",

pages = "5111--5113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

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TY - JOUR

T1 - A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

AU - Flandre, Denis

AU - Campabadal, Francesca

AU - Esteve, Joan

AU - Lora-Tamayo, E.

AU - Van de Wiele, Febe

PY - 1991/11/1

Y1 - 1991/11/1

M3 - Article

SN - 0021-8979

VL - 70

SP - 5111

EP - 5113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -