2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

Keyphrases

• Monte Carlo Method 100%
• Weighted Essentially Non-oscillatory 100%
• Semiconductor Device Modeling 100%
• 2D Semiconductors 100%
• Boltzmann Scheme 100%
• Boltzmann Transport Equation 66%
• Monte Carlo 33%
• Electric Field (E-field) 33%
• MOSFET 33%
• Semiconductor Devices 33%
• Numerical Scheme 33%
• Transport Equation 33%
• Poisson Equation 33%
• Equation Model 33%
• Mean Velocity 33%
• MESFET 33%
• Monte Carlo Results 33%
• Direct numerical Simulation 33%
• Direct Simulation Monte Carlo 33%
• Deterministic Code 33%
• High-order Accurate 33%
• Coarse Grid 33%
• Boundary Singularities 33%
• Finite Difference 33%
• Monte Carlo Solver 33%
• Field Velocity 33%

Engineering

• Oscillatory 100%
• Semiconductor Device 100%
• Boltzmann Equation 100%
• Boundary Condition 100%
• Dimensional Space 33%
• Simulation Result 33%
• Good Agreement 33%
• Singularities 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Numerical Scheme 33%
• Direct Simulation 33%
• Coarse Grid 33%
• Coupled Equation 33%
• Electric Field 33%
• Direct Numerical Simulation 33%