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Keyphrases
HfO2
74%
Resistive Switching
46%
Resistive Random Access Memory (ReRAM)
46%
Soft Breakdown
35%
Resistive Switching Device
35%
Conduction Characteristics
30%
Memristor
30%
Ultrathin
29%
Conductance
27%
Post-breakdown
26%
Memdiode
26%
I-V Characteristics
25%
Oxides
24%
Series Resistance
24%
Conductive Filament
23%
Quantum Point Contact
22%
Leakage Current
22%
Electron Transport
21%
Current-voltage Characteristics
21%
Memory Device
20%
Dielectric Breakdown
18%
Electrical Stress
18%
Memristive Devices
17%
Ultra-thin Gate Oxide
17%
Capacitors
17%
RRAM Devices
17%
SPICE Model
17%
Breakdown Current
16%
Progressive Breakdown
16%
Compact Model
16%
Hard Breakdown
16%
Silica
15%
Constriction
15%
Metal-insulator-metal Structure
15%
Low Resistance State
14%
Spatial Distribution
14%
Current-voltage (I-V) Characteristics
14%
Gate Stack
13%
Temperature Effect
13%
Set Voltage
13%
Breakdown Path
12%
Gate Oxide
12%
Dielectric Film
12%
SiO2 Film
12%
Constant Voltage Stress
12%
Constant Voltage
12%
MOS Structure
12%
Aluminum Oxide
11%
Nanolaminates
11%
Mesoscopic
11%
Engineering
Resistive
100%
Current-Voltage Characteristic
61%
Dielectrics
39%
Gate Oxide
32%
Constant Voltage
28%
Series Resistance
24%
Resistive Random Access Memory
24%
Metal-Insulator-Metal
23%
Contact Point
20%
Oxide Layer
19%
Dielectric Films
18%
Random Access Memory Device
17%
Tunnel Construction
17%
Silicon Dioxide
16%
Conductive Filament
16%
SPICE
16%
Memristor
15%
Semiconductor Structure
13%
Spatial Distribution
12%
Model Parameter
11%
Failure Event
11%
Contact Model
11%
Power Law Model
11%
Metal Oxide Semiconductor
11%
Failure Mode
10%
Oxide Thickness
10%
Gate Dielectric
9%
Parallel Resistance
9%
Gate Stack
9%
Experimental Result
9%
High Resistance State
9%
Current Drain
8%
Characteristic Time
8%
Thermal Effect
8%
Sio2 Film
8%
Reliability Availability and Maintainability (Reliability Engineering)
8%
Oxide Film
8%
Experimental Observation
8%
Conductive
7%
Metal-Oxide-Semiconductor Field-Effect Transistor
7%
Temperature Dependence
7%
Energy Dissipation
7%
Memory State
7%
Metal Gate
6%
Equivalent Circuit Model
6%
Gallium Arsenide
6%
Electric Field
6%
Stress Induced Leakage Current
6%
Equivalent Circuit
6%
Special Attention
6%
