Keyphrases
Graphene Field-effect Transistor
62%
Graphene
41%
Field-effect Transistors
30%
Drain Current
28%
Undoped
25%
Two Dimensional
25%
Carbon Nanotubes
23%
Bilayer Graphene
23%
Capacitance
22%
Radiofrequency Lesion
22%
Schottky Barrier
22%
Drain Current Model
21%
Transistor
20%
Double-gate MOSFET
20%
Carbon Nanotube Field Effect Transistor (CNTFET)
20%
Graphene FET
20%
Large-signal Model
20%
Compact Model
20%
Contact Resistance
19%
MOSFET
18%
Poisson Equation
18%
Charge Model
18%
Small-signal Model
17%
Hexagonal Boron Nitride (h-BN)
16%
Low-frequency Noise
16%
Circuit Simulator
15%
Capacitance Model
15%
Double Gate
15%
Field Effect
15%
Resistive Switching
15%
Intrinsic Capacitance
15%
Radio Frequency Performance
13%
Surface Potential
13%
Graphene-metal Contact
13%
Physics-based Model
12%
Radio Frequency
12%
Drift-diffusion
12%
Venous Thromboembolism
12%
Explicit Model
12%
Scanning Near-field Optical Microscopy
12%
Beam Propagation Method
12%
Carrier Transport
12%
Compact Modeling
12%
HfO2
12%
Bias Dependence
11%
Conductance
11%
Current-voltage Characteristics
10%
Surrounding-gate MOSFET (SGMOSFET)
10%
Gate Metal
10%
Nanotubes
10%
Engineering
Field-Effect Transistor
100%
Graphene
69%
Metal-Oxide-Semiconductor Field-Effect Transistor
61%
Field Effect Transistors
42%
Current Drain
41%
Two Dimensional
30%
Radio Frequency
28%
Signal Model
25%
Carbon Nanotubes
23%
Schottky Barrier
21%
Computer Simulation
19%
Resistive
18%
Layer Graphene
18%
Frequency Noise
16%
Current-Voltage Characteristic
15%
Good Agreement
15%
Barrier Height
13%
Nitride
13%
Isolation Method
12%
Series Resistance
12%
Control Model
12%
Gate Dielectric
12%
Gate Oxide
12%
2D Material
12%
Dielectrics
11%
Surface Potential
11%
Applied Voltage
10%
Signal Modeling
10%
Electrostatic Force
10%
Channel Length
10%
Tunnel Construction
9%
Test Structure
9%
Figure of Merit
8%
Quantum Wire
8%
Energy Dissipation
8%
Limiting Factor
8%
Boundary Condition
8%
Film Silicon
7%
Analytical Model
7%
Nanoscale
6%
Molybdenum Disulfide
6%
Amplifier
6%
Nanotubes
6%
Internals
6%
Lyapunov Exponent
6%
Potential Function
6%
Diffusion Model
5%
Single Channel
5%
Closed Form Expression
5%
Monolayers
5%
